High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec−1 swing-Reference-Cited by-同舟云学术

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High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec−1 swing

Published:2020-01-31 Issue:SG Volume:59 Page:SGGA01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Chien,Chen Hsuan-Han,Tung Yi-Chun,Wang Wei-Chun,Huang Zhong-Ying,Shih Bing-Yang,Hsiung Szu-Yen,Wang Shih-An,Fan Yu-Chi,Lee Tsung-Ming,Lin Chien-Liang,Huang Zi-You,Liu Hsiu-Ming,Lee Sheng,Chou Wu-Ching,Cheng Chun-Hu,Hsu Hsiao-Hsuan

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.7567/1347-4065/ab6420/pdf

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Engineering negative capacitance Fully Depleted Silicon-on-insulator FET for improved performance;Microelectronics Journal;2023-10

2. MoS2 negative-capacitance transistors with steep slope and negligible hysteresis by using monolayer Al1-Zr O as gate dielectric plus NH3-plasma treatment;Applied Surface Science;2022-02

3. Ferroelectric Polarization Enhancement in Hafnium-Based Oxides Through Capping Layer Engineering;IEEE Journal of the Electron Devices Society;2022

4. Simultaneous Analysis of Multi-Variables Effect on the Performance of Multi-Domain MFIS Negative Capacitance Field-Effect Transistors;IEEE Journal of the Electron Devices Society;2021

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