Tri-Gate Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization with Improved Electron Transport Properties-Reference-Cited by-同舟云学术

Tri-Gate Polycrystalline Silicon Thin-Film Transistors Fabricated by Continuous-Wave Laser Lateral Crystallization with Improved Electron Transport Properties

Published:2012-02-01 Issue:2S Volume:51 Page:02BJ03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Fujii Shuntaro,Kuroki Shin-Ichiro,Kawasaki Yuya,Kotani Koji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference29 articles.

1. Conductivity behavior in polycrystalline semiconductor thin film transistors

2. XeCl Excimer laser annealing used in the fabrication of poly-Si TFT's

3. Mobility enhancement limit of excimer-laser-crystallized polycrystalline silicon thin film transistors

4. Characterization of Novel Polycrystalline Silicon Thin-Film Transistors with Long and Narrow Grains

5. Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films

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