Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence-Reference-Cited by-同舟云学术

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Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence

Published:2011-04-01 Issue:4S Volume:50 Page:04DP14
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Inagaki Makoto,Suzuki Hidetoshi,Suzuki Akio,Mutaguchi Kazumasa,Fukuyama Atsuhiko,Kojima Nobuaki,Ohshita Yoshio,Yamagichi Masafumi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference22 articles.

1. 1-eV solar cells with GaInNAs active layer

2. Deep levels in p-type InGaAsN lattice matched to GaAs

3. Effects of thermal annealing on deep-level defects and minority-carrier electron diffusion length in Be-doped InGaAsN

4. Effect of growth rate and gallium source on GaAsN

5. Band Anticrossing in GaInNAs Alloys

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