Dual Metal/High-kGate-Last Complementary Metal–Oxide–Semiconductor Field-Effect Transistor with SiBN Film and Characteristic Behavior In Sub-1-nm Equivalent Oxide Thickness
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Published:2011-08-01
Issue:8R
Volume:50
Page:084201
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Kikuchi Yoshiaki,Wakabayashi Hitoshi,Tsukamoto Masanori,Nagashima Naoki
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering