Fabrication of Ni/Al2O3/Ni Heteroepitaxial Junction by Post-Hydrogen Reduction of NiO/Al2O3/NiO Trilayered Epitaxial Thin Film-Reference-Cited by-同舟云学术

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Fabrication of Ni/Al2O3/Ni Heteroepitaxial Junction by Post-Hydrogen Reduction of NiO/Al2O3/NiO Trilayered Epitaxial Thin Film

Published:2011-09-01 Issue:9R Volume:50 Page:098004
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamauchi Ryosuke,Kobayashi Keisuke,Hosaka Makoto,Suzuki Toshimasa,Koyama Kohji,Matsuda Akifumi,Arai Hideki,Kato Yushi,Mitsuhashi Masahiko,Kaneko Satoru,Yoshimoto Mamoru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference18 articles.

1. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions

2. Giant magnetic tunneling effect in Fe/Al2O3/Fe junction

3. 80% tunneling magnetoresistance at room temperature for thin Al–O barrier magnetic tunnel junction with CoFeB as free and reference layers

4. Electron tunneling between ferromagnetic films

5. Probing Spin Accumulation in Ni/Au/Ni Single-Electron Transistors with Efficient Spin Injection and Detection Electrodes

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