Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography-Reference-Cited by-同舟云学术

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Fabrication of 70-nm-Pitch Two-Level Interconnects by using Extreme Ultraviolet Lithography

Published:2011-02-01 Issue:2R Volume:50 Page:026504
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Nakamura Naofumi,Oda Noriaki,Soda Eiichi,Aoyama Hajime,Tanaka Yuusuke,Kawamura Daisuke,Hosoi Nobuki,Takigawa Yukio,Shiohara Morio,Kondo Seiichi,Mori Ichiro,Saito Shuichi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference34 articles.

1. Total Performance of 32-nm-Node Ultralow-$k$/Cu Dual-Damascene Interconnects Featuring Short-TAT Silylated Porous Silica $(k = \hbox{2.1})$

2. High-Etching-Selectivity Barrier SiC (k<3.5) Film for 32-nm-Node Copper/Low-kInterconnects

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