Electrophysical properties of silicon doped with lutetium

Abstract

This article discusses the electrical properties of silicon doped with lutetium. The diffusion method is used in the fabrication of silicon structures doped with lutetium. n-Si, p-Si, n-Si<Lu> and p-Si<Lu> were prepared to measure electrophysical parameters. The resistivity of the samples, the mobility of charge carriers, the concentration and the distribution of electrophysical parameters depending on the temperature and thickness of the sample have been studied. These parameters were determined by the four-probe van der Pauw method. Research work was carried out at room temperature and in the range of 77÷300 K. Ohmic contact was obtained through a mixture of 1% Sb + 99% Au for measuring samples on the HMS500 instrument. The resistivity and concentration of charge carriers were also studied, taken from a distance of 2 µm from the surface of the samples. The electrical parameters of the samples were measured using an Ecopia Hall effect measurement system. The electrical parameters of the p-Si and p-Si<Lu> samples did not change significantly. Changes in the surface morphology of these samples were observed in the results obtained in ACM.