Physics‐based compact model of integrated gate‐commutated thyristor with multiple effects for high‐power application

Author:

Lyu Gang1ORCID,Zhuang Chijie1,Zeng Rong1,Long Teng2,Palmer Patrick R.2

Affiliation:

1. Department of Electrical EngineeringTsinghua UniversityBeijingPeople's Republic of China

2. Department of Electrical EngineeringUniversity of CambridgeCambridgeUK

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference25 articles.

1. On the potential of IGCTs in HVDC;Ladoux P.;IEEE J. Emerg. Sel. Top. Power Electron.,2015

2. 2014 Proc. Int. Conf. Exhibition and Conf. for Power Electronics Intelligent Motion Renewable Energy and Energy Management Nuremberg Germany J. Wahlstroem D. Dujic M.A. Luescher High power IGCT based multilevel inverter 1 6

3. 2015 Proc. Int. Conf. PowerElectronics and Applications (EPE'15 ECCE‐Europe) Geneva Switzerland U. Vemulapati M. Rahimo M. Arnold Recent advancements in IGCT technologies for high powerelectronics applications 1 10

4. 2015 Proc. Int.Conf. Electric Ship Technologies Symp. (ESTS) OldTown Alexandria America F. Agostini U. Vemulapati D. Torresin 1MW bi‐directional DC solid state circuit breaker based onair cooled reverse blocking‐IGCT 287 292

5. 1995 Proc. Int. Conf. Industry ApplicationsConf. Thirtieth IAS Annual Meeting Orlando Florida USA I. Budihardjo P.O. Lauritzen K.Y. Wong Defining standard performance levels for power semiconductordevices 1084 1090

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