1. 2008 Presented at the 2008 34th Annual Conf. of IEEE Industrial Electronics A. Huang Recent advances and applications of power electronics and motor drives – power semiconductor devices
2. 2012 2012 24th Int. Symp. Power Semiconductor Devices and ICs T. Minato S. Aono K. Uryu Making a bridge from SJ‐MOSFET to IGBT via RC‐IGBT structure concept for 600 V class SJ‐RC‐IGBT in a single chip solution 137 140
3. 2004 2004 Proc. 16th Int. Symp. Power Semiconductor Devices and ICs T. Takahashi A. Yamamoto S. Aono 1200 V reverse conducting IGBT 133 136
4. 2016 2016 28th Int. Symp Power Semiconductor Devices and ICs (ISPSD) T. Yoshida T. Takahashi K. Suzuki The second‐generation 600 V RC‐IGBT with optimized FWD 159 162
5. 2009 2009 21st Int. Symp. Power Semiconductor Devices & IC's M. Rahimo A. Kopta U. Schlapbach The bi‐mode insulated gate transistor (BIGT) a potential technology for higher power applications 283 286