Performance comparison of Si IGBT and SiC MOSFET power devices based LCL three‐phase inverter with double closed‐loop control
Author:
Affiliation:
1. College of Mechatronics and Control EngineeringShenzhen UniversityShenzhenPeople's Republic of China
Funder
National Natural Science Foundation of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2018.5702
Reference23 articles.
1. Analysis and implement of the single‐phase voltage‐controlled grid‐connected inverter;He C.;IET Power Electron.,2017
2. Phase‐reshaping strategy for enhancing grid‐connected inverter robustness to grid impedance
3. Calculation of switching loss and current total harmonic distortion of cascaded multilevel grid‐connected inverter and Europe efficiency enhancement considering variation of DC source power;Wu F.;IET Power Electron.,2016
4. The benefits of SiC MOSFETs in a T‐type inverter for grid‐tied applications;Anthon A.;IEEE Trans. Power Electron.,2017
5. Design and Comparison of a 10-kW Interleaved Boost Converter for PV Application Using Si and SiC Devices
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