Modelling parallel SiC MOSFETs: thermal self‐stabilisation vs. switching imbalances

Author:

Bertelshofer Teresa1ORCID,März Andreas1,Bakran Mark‐M.1

Affiliation:

1. Department of MechatronicsUniversity of BayreuthGermany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference28 articles.

1. 2016 Proc. Int. Exhibition Conf. for Power Electronics Intelligent Motion Renewable Energy and Energy Management (PCIM) Nuremberg Germany M. Hayes J. Casady J. Palmour 650 V 7 mOhm SiC MOSFET development for dual‐side sintered power modules in electric drive vehicles 1 6

2. 2016 Proc. Int. Exhibition Conf. for Power Electronics Intelligent Motion Renewable Energy and Energy Management (PCIM) Nuremberg Germany T. Bertelshofer R. Horff A. Maerz A performance comparison of a 650 V Si IGBT and SiC MOSFET inverter under automotive conditions 1 8

3. 2018 Proc. Int. Exhibition Conf. for Power Electronics Intelligent Motion Renewable Energy and Energy Management (PCIM) Nuremberg Germany T. Bertelshofer A. Maerz M.‐M. Bakran Derating of parallel SiC MOSFETs considering switching imbalances 1 8

4. 2017 Proc. Int. Exhibition Conf. for Power Electronics Intelligent Motion Renewable Energy and Energy Management (PCIM) Nuremberg Germany M. Wissen D. Domes A. Groove Effects of influencing the individual leg inductance in case of paralleling modules on basis of XHP™ 3 and EconoDUAL™ 1 6

5. 2017 Proc. European Conf. on Power Electronics and Applications (EPE) Warsaw Poland J. Weigel J. Boehmer A. Nagel Paralleling high power dual modules: a challenge for application engineers and power device manufacturers 1 10

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