Comparison of SiC MOSFET‐based and GaN HEMT‐based high‐efficiency high‐power‐density 7.2 kW EV battery chargers-Reference-Cited by-同舟云学术

Comparison of SiC MOSFET‐based and GaN HEMT‐based high‐efficiency high‐power‐density 7.2 kW EV battery chargers

Author:

Taylor Allan¹,Lu Juncheng¹,Zhu Liyan²,Bai Kevin (Hua)²,McAmmond Matt³,Brown Alan³

Affiliation:

1. Electrical and Computer EngineeringKettering University1700 University AveFlintMIUSA

2. Electrical Engineering and Computer ScienceUniversity of TennesseeKnoxvilleTN37996USA

3. Hella Corporate Center USA Inc.43811 Plymouth Oaks BoulevardPlymouth Twp.MI48170USA

Funder

U.S. Department of Energy

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

Reference15 articles.

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