Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules-Reference-Cited by-同舟云学术

Experimental Comparison of High‐Speed Gate Driver Design for 1.2‐kV/120‐A Si IGBT and SiC MOSFET Modules

Author:

Yin Shan¹,Tseng King Jet²³,Simanjorang Rejeki⁴,Tu Pengfei²

Affiliation:

1. Rolls‐Royce@NTU Corporate LaboratoryNanyang Technological UniversitySingaporeSingapore

2. School of Electrical and Electronic EngineeringNanyang Technological UniversitySingaporeSingapore

3. Singapore Institute of TechnologySingaporeSingapore

4. Applied Technology GroupRolls‐Royce Singapore Pte. Ltd.SingaporeSingapore

Funder

National Science Foundation, United Arab Emirates

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

Reference29 articles.

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