Low conduction loss and low device stress three‐level power factor correction rectifier-Reference-Cited by-同舟云学术

Low conduction loss and low device stress three‐level power factor correction rectifier

Published:2013-03 Issue:3 Volume:6 Page:478-487
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Su Bin¹²,Zhang Junming²,Wen Huiqing³,Lu Zhengyu²

Affiliation:

1. Hangzhou Electric Power BureauState Grid Corporation of ChinaHangzhou310012People's Republic of China

2. Department of Electrical EngineeringZhejiang University of ChinaHangzhou310027People's Republic of China

3. Department of Electrical and Electronic EngineeringXi'an Jiaotong‐Liverpool UniversitySuzhou215123People's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2012.0515

Reference27 articles.

1. A variable frequency phase‐shift modulated three‐level resonant single‐stage power factor correction converter;Agamy M.S.;IEEE Trans. Power Electron.,2008

2. Performance comparison of single‐stage three‐level resonant Ac/Dc converter topologies;Agamy M.S.;IEEE Trans. Power Electron.,2009

3. 2001 IEEE 32nd Annual Power Electronics Specialists Conf. 2001 (PESC 2001) P. Barbosa F. Canales F. Lee Analysis and evaluation of the two‐switch three‐level boost rectifier

4. An interleaved totem‐pole boost bridgeless rectifier with reduced reverse‐recovery problems for power factor correction;Bin S.;IEEE Trans. Power Electron.,2010

5. Analysis and implementation of a three‐level PWM rectifier/inverter;Bor‐Ren L.;IEEE Trans. Aerosp. Electron. Syst.,2000

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