Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model-Reference-Cited by-同舟云学术

Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model

Published:2020-11 Issue:14 Volume:13 Page:2992-3000
ISSN:1755-4535
Container-title:IET Power Electronics
language:en
Short-container-title:IET power electron.

Author:

Li Xin¹²^ORCID,Xiao Fei¹,Luo Yifei¹,Duan Yaoqiang²

Affiliation:

1. National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval University of EngineeringWuhanPeople's Republic of China

2. School of Electrical and Electronic Engineering, Huazhong University of Science and TechnologyWuhanPeople's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2020.0350

Reference30 articles.

1. A 50‐kW high‐frequency and high‐efficiency SiC voltage source inverter for more electric aircraft;Yin S.;IEEE Trans. Ind. Electron.,2017

2. Modeling of wide bandgap power semiconductor devices – part I;Mantooth H.A.;IEEE Trans. Electron. Devices,2015

3. Improvement of an electro‐thermal model of SiC MPS diodes;Starzak Ł;IET Power Electron.,2018

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