Temperature–humidity–bias testing on insulated‐gate bipolartransistor modules – failure modes and acceleration due to high voltage-Reference-Cited by-同舟云学术

Temperature–humidity–bias testing on insulated‐gate bipolartransistor modules – failure modes and acceleration due to high voltage

Published:2015-12 Issue:12 Volume:8 Page:2329-2335
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Zorn Christian¹,Kaminski Nando¹

Affiliation:

1. Institute for Electrical Drives, Power Electronics, and Devices (IALB)University of Bremen28359BremenGermany

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2015.0031

Reference46 articles.

1. 1974 Proc. 12th Int. Reliability Physics Symp. (IRPS) Las Vegas Nevada USA H. Koelmans Metallization corrosion in silicon devices by moisture‐induced electrolysis 168 171

2. The reliability of semiconductor devices in the bell system

3. A comparison of the theory of moisture diffusion in plastic encapsulated microelectronics with moisture sensor chip and weight‐gain measurements;Ardebili H.;IEEE Trans. Compon. Packag. Manuf. Technol.,2002

4. Popcorning: a failure mechanism in plastic-encapsulated microcircuits

5. 2007 Proc. 57th Electronic Components and Technology Conf. (ECTC) Reno Nevada USA L. Li J. Xue M. Ahmad Environmental effects on dielectric films in plastic encapsulated silicon devices 755 760

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