Family of DTMRC‐based DC–DC converters with an RZP

Author:

Han Fuqiang1,Wang Yifeng1,Yang Liang2ORCID,Wang Chengshan1,Liu Ruixin1,Meng Zhun3

Affiliation:

1. School of Electrical and Information EngineeringKey Laboratory of Smart Grid of Ministry of EducationTianjin UniversityNankai DistrictTianjin300072People's Republic of China

2. National Electric Power Dispatching and Control CenterState Grid Corporation of ChinaBeijing100031People's Republic of China

3. State Grid Tianjin Economic Research InstituteTianjin300171People's Republic of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference33 articles.

1. High switching performance of 1700‐V 50‐A SiC power MOSFET over Si IGBT/BiMOSFET for advanced power conversion applications;Hazra S.;IEEE Trans. Power Electron.,2016

2. SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors

3. Experimental and Analytical Performance Evaluation of SiC Power Devices in the Matrix Converter

4. Comparison of SiC voltage source inverters using synchronous rectification and freewheeling diode;Yin S.;IEEE Trans. Ind. Electron.,2018

5. Three‐phase LLC series resonant DC–DC converter using SiC MOSFETs to realize high‐voltage and high‐efficiency operation;Nakakohara Y.;IEEE Trans. Ind. Electron.,2016

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