Modelling the threshold voltage of p‐channel enhancement‐mode GaN heterostructure field‐effect transistors-Reference-Cited by-同舟云学术

Modelling the threshold voltage of p‐channel enhancement‐mode GaN heterostructure field‐effect transistors

Published:2018-04 Issue:4 Volume:11 Page:675-680
ISSN:1755-4543
Container-title:IET Power Electronics
language:en
Short-container-title:IET Power Electronics

Author:

Kumar Ashwani¹^ORCID,De Souza Maria Merlyne¹

Affiliation:

1. Department of Electronic and Electrical EngineeringUniversity of SheffieldGeorge Porter Building, Broad LaneSheffieldUK

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-pel.2017.0438

Reference24 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. 2016 2016 IEEE Int. Electron Devices Meeting (IEDM) D. Shibata R. Kajitani M. Ogawa 1.7 kV/1.0 m Ω cm 2 normally off vertical GaN transistor on GaN substrate with regrown p‐GaN/AlGaN/GaN semipolar gate structure 10.1.1 10.1.4

3. Gate-First AlGaN/GaN HEMT Technology for High-Frequency Applications

4. 2016 2016 IEEE Int. Electron Devices Meeting (IEDM) H. Ishida R. Kajitani Y. Kinoshita GaN‐based semiconductor devices for future power switching systems 20.4.1 20.4.4

5. GaN-Based Super Heterojunction Field Effect Transistors Using the Polarization Junction Concept

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1. Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates;IEEE Journal of the Electron Devices Society;2023

2. Analytical Model on the Threshold Voltage of p-Channel Heterostructure Field-Effect Transistors on a GaN-Based Complementary Circuit Platform;IEEE Transactions on Electron Devices;2022-01

3. Analytical Modeling of Sheet Carrier Density and on-Resistance in Polarization Super-Junction HFETs;IEEE Transactions on Electron Devices;2021-11

4. Investigation on threshold voltage of p-channel GaN MOSFETs based on p-GaN/AlGaN/GaN heterostructure*;Chinese Physics B;2021-08-01

5. Simulation of enhancement-mode recessed-gate p-channel HFETs based on polarization-induced doping and an InGaN/GaN/AlGaN heterostructure;Semiconductor Science and Technology;2021-06-03