Experimental study of flicker noise in m.i.s. field-effect transistors-Reference-Cited by-同舟云学术

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Experimental study of flicker noise in m.i.s. field-effect transistors

Published:1969 Issue:24 Volume:5 Page:607
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Mantena N.R.,Lucas R.C.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19690452?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Johnson, H.: Wallmark, L.T., Johnson, J., , et al. (Eds.) Field effect transistors, (Prentice-Hall 1966), p. 160

2. ‘1/fnoise and related surface effects in germanium’, MIT Lincoln Laboratory, 1955

3. Grove, A.S.: Physics and technology of semiconductor devices, (Wiley 1967),chap. 12,

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-frequency noise in downscaled silicon transistors: Trends, theory and practice;Physics Reports;2022-12

2. A 1/f noise technique to extract the oxide trap density near the conduction band edge of silicon;IEEE Transactions on Electron Devices;1989-09

3. Searching a Fractal Basis for Low-Frequency 1/fFluctuations –MOSFET Structure in Case;Japanese Journal of Applied Physics;1989-05-20

4. Flicker (1/f) noise generated by a random walk of electrons in interfaces;IEEE Transactions on Electron Devices;1987-05

5. 1/f noise in n-channel silicon-gate MOS transistors;IEEE Transactions on Electron Devices;1982-06

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