81.5–85.9 GHz injection-locked frequency divider in 65 nm CMOS
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20081426?crawler=true&mimetype=application/pdf
Reference6 articles.
1. A CMOS direct injection-locked oscillator topology as high-frequency low-power frequency divider
2. 40-Gb/s amplifier and ESD protection circuit in 0.18-/spl mu/m CMOS technology
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1. 5-GHz fully differential multifunctional circuit;International Journal of Electronics;2012-09
2. A 90-nm CMOS 144 GHz Injection Locked Frequency Divider with Inductive Feedback;JSTS:Journal of Semiconductor Technology and Science;2011-09-30
3. CMOS direct injection-locked frequency divider (3.55 mW 80 GHz) with 26.3% locking range using distributed LC tank and body bias techniques;Microwave and Optical Technology Letters;2011-08-19
4. A $V$-Band Divide-by-4 Direct Injection-Locked Frequency Divider in 0.18-$\mu{\hbox {m}}$ CMOS;IEEE Transactions on Microwave Theory and Techniques;2011-02
5. A Low Power V-Band Injection-Locked Frequency Divider in 0.13-.MU.m Si RFCMOS Technology;IEICE Transactions on Electronics;2010
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