Frequency-resolved optical gating characterisation of passively modelocked quantum-dot laser
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20081810?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers
2. The benefits of ultrashort optical pulses in optically interconnected systems
3. Electrooptic sampling in GaAs integrated circuits
4. High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser
5. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
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1. Nonlinear dynamical properties of frequency swept fiber-based semiconductor lasers;Journal of Physics: Photonics;2021-09-27
2. Externally-Triggered Activation and Inhibition of Optical Pulsating Regimes in Quantum-Dot Mode-locked Lasers;Scientific Reports;2018-08-21
3. Passively mode-locked InAs quantum dot lasers on a silicon substrate by Pd-GaAs wafer bonding;Applied Physics Letters;2017-04-03
4. Characteristics and instabilities of mode-locked quantum-dot diode lasers;Optics Express;2013-03-26
5. Characteristics of passively mode-locked quantum dot lasers from 20 to 120°C;SPIE Proceedings;2013-03-14
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