Charging effect of Si nanocrystals in gate oxide near gate on MOS capacitance
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20030772?crawler=true&mimetype=application/pdf
Reference3 articles.
1. Room-temperature single-electron charging phenomena in large-area nanocrystal memory obtained by low-energy ion beam synthesis
2. Nanocrystals acting as Coulomb islands operating at room temperature created using a focused ion-beam process
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2. Oxygen partial pressure dependence of memory effect of sputtered nc-Al/alpha-Al2O3 thin films;J ALLOY COMPD;2008
3. Photon-induced conduction modulation in SiO2 thin films embedded with Ge nanocrystals;Applied Physics Letters;2007-03-05
4. Influence of Si-nanocrystal distribution in the oxide on the charging behavior of MOS structures;IEEE Transactions on Electron Devices;2006-04
5. Charging/discharging of silicon nanocrystals embedded in an SiO2matrix inducing reduction/recovery in the total capacitance and tunneling current;Smart Materials and Structures;2005-12-13
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