Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk∕SOI CMOS process-Reference-Cited by-同舟云学术

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Monolithically integrated avalanche photodiode and transimpedance amplifier in a hybrid bulk∕SOI CMOS process

Published:2003 Issue:4 Volume:39 Page:391
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Moloney A.M.,Morrison A.P.,Jackson J.C.,Mathewson A.,Alderman J.,Donnelly J.,O'Neill B.,Kelleher A.M.,Healy G.,Murphy P.J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20030187?crawler=true&mimetype=application/pdf

Reference5 articles.

1. 1 Gbit/s CMOS photoreceiver with integrated detector operating at 850 nm

2. Spatially modulated light detector in CMOS with sense-amplifier receiver operating at 180 Mb/s for optical data link applications and parallel optical interconnects between chips

3. Operation of a single-ended 550 Mbit/s, 41 fJ, hybrid CMOS/MQW receiver-transmitter

4. Small signal equivalent circuit for Geiger-mode avalanche photodiodes

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1. Optical Wireless APD Receiver With High Background-Light Immunity for Increased Communication Distances;IEEE Journal of Solid-State Circuits;2016-07

2. Monolithically integrated optical receiver with large‐area avalanche photodiode in high‐voltage CMOS technology;Electronics Letters;2014-10

3. Active quench and reset integrated circuit with novel hold-off time control logic for Geiger-mode avalanche photodiodes;Optics Letters;2012-09-14

4. Integrable bias solution for avalanche photodiodes;Electronics Letters;2011

5. Progress towards photon counting between 1μm and 1.6μm using silicon with infrared absorbers;SPIE Proceedings;2010-04-23

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