Solution to trapped charge in FGMOS transistors-Reference-Cited by-同舟云学术

Solution to trapped charge in FGMOS transistors

Published:2003 Issue:19 Volume:39 Page:1416
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Rodriguez-Villegas E.,Barnes H.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20030900?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Rodriguez-Villegas, E.: ‘Low voltage and low power analog and digital design with the floating gate MOS transistor (FGMOS)’, 2002, PhD, University of Seville, Spain

2. Low-voltage CMOS op-amp with rail-to-rail input and output signal swing for continuous-time signal processing using multiple-input floating-gate transistors

3. Hasler, P.: ‘Foundations of learning in analog VLSI’, 1997, PhD, California Institute of Technology, Pasadena, CA, USA

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