320 Gbit∕s error-free demultiplexing using ultrafast optical gate monolithically integrating a photodiode and electroabsorption modulator
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20030813?crawler=true&mimetype=application/pdf
Reference5 articles.
1. 2.3 picoseconds optical gate monolithically integrating photodiode and electroabsorption modulator
2. Ishibashi, T., Shimizu, N., Kodama, S., Ito, H., Nagatsuma, T., and Furuta, T.: ‘Uni-traveling-carrier photodiodes’, OSA TOPS on Ultrafast Electronics and Optoelectronics, (Optical Society of America, Washington, D.C. 1997),13, p. 83–87 OSA Proceedings Series
3. Polarisation-insensitive travelling-wave electrode electroabsorption (TW-EA) modulator with bandwidth over 50 GHz and driving voltage less than 2 V
4. 160 Gbit∕s error-free demultiplexing by ultrafast optical gate monolithically integrating photodiode and electroabsorption modulator
5. 320 Gbit∕s optical gate monolithically integrating photodiode and electroabsorption modulator
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