The mechanism and device applications of high field instabilities in gallium arsenide
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
General Engineering,General Medicine
Link
https://digital-library.theiet.org/content/journals/10.1049/ree.1965.0115?crawler=true&mimetype=application/pdf
Reference13 articles.
1. J. B. Gunn, “Instabilities of current and of potential distribution in GaAs and InP”, I.B.M. Research Paper RC 1216, June 196
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Gunn-effect pulse and logic devices;Radio and Electronic Engineer;1970
2. Gunn effect bibliography;IEEE Transactions on Electron Devices;1968-10
3. Static-dynamic characteristics of a bulk-effect negative-resistance oscillator;IEEE Transactions on Electron Devices;1968-06
4. Behaviour of the High-Field Domains below the Voltage of the Nucleation Threshold;Physica Status Solidi (b);1968
5. Determination of current waveform and efficiency of Gunn diodes;Electronics Letters;1967
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