Etched Al 0.32 Ga 0.68 N/GaN HEMTs with high output current and breakdown voltage (>600 V)-Reference-Cited by-同舟云学术

Etched Al 0.32 Ga 0.68 N/GaN HEMTs with high output current and breakdown voltage (>600 V)

Published:2018-05 Issue:5 Volume:13 Page:676-679
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Duan Baoxing¹,Xie Shenlong¹,Guo Haijun¹,Yang Yintang¹

Affiliation:

1. Key Laboratory of the Ministry of Education for Wide Band‐Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian UniversityNo. 2 South TaiBai RoadXi'anShaanxi710071People's Republic of China

Funder

National Natural Science Foundation of China

Higher Education Discipline Innovation Project

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2017.0651

Reference20 articles.

1. GaN on Si Technologies for Power Switching Devices

2. High-Speed, Enhancement-Mode GaN Power Switch With Regrown ${\rm n}+$ GaN Ohmic Contacts and Staircase Field Plates

3. Current Collapse Suppression by Gate Field-Plate in AlGaN/GaN HEMTs

4. Deep-Level Characterization in GaN HEMTs-Part I: Advantages and Limitations of Drain Current Transient Measurements

5. Low Specific on-Resistance Power MOS Transistor With Multilayer Carrier Accumulation Breaks the Limit Line of Silicon

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