High‐uniformity 1 × 64 linear arrays of silicon carbide avalanche photodiode
Author:
Affiliation:
1. National Key Laboratory of ASIC, Hebei Semiconductor Research InstituteShijiazhuang050051People's Republic of China
Funder
National Natural Science Foundation of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2020.1241
Reference14 articles.
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2. Demonstration of ultraviolet 6H‐SiC PIN avalanche photodiodes;Liu H.‐D.;IEEE Photonics Technol. Lett.,2006
3. Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication Layer
4. 4H‐SiC PIN recessed‐window avalanche photodiode with high quantum efficiency;Liu H.‐D.;IEEE Photonics Technol. Lett.,2008
5. Proton‐implantation‐isolated separate absorption charge and multiplication 4H‐SiC avalanche photodiodes;Zhou Q.;IEEE Photonics Technol. Lett.,2011
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