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Graphene self‐switching diode‐based thermoelectric rectifier

  • Published:2020-09 Issue:20 Volume:56 Page:1069-1072
  • ISSN:0013-5194
  • Container-title:Electronics Letters
  • language:en
  • Short-container-title:Electron. lett.

Author:

Kaushal B.1,Garg S.1,Prakash K.1,Kasjoo S.R.2,Kumar S.3,Gupta N.1,Singh A.K.1ORCID

Affiliation:

1. Department of Electronics and Communication EngineeringPunjab Engineering College (Deemed to be University)ChandigarhIndia

2. School of Microelectronic EngineeringUniversiti Malaysia PerlisArau02600Malaysia

3. Department of Applied SciencePunjab Engineering College (Deemed to be University)ChandigarhIndia

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Reference18 articles.

1. Graphene for Thermoelectric Applications: Prospects and Challenges

2. Thermal properties of graphene: Fundamentals and applications

3. Ultrahigh electron mobility in suspended graphene

4. Theory of thermopower in two-dimensional graphene

5. YuB.ChangL.AhmedS.et al.: ‘FinFET scaling to 10 nm gate length’.IEEE Int. Electron Devices Meeting (IEDM) San Francisco CA USA 2002 pp.251–254

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. InGaAs Self-Switching Diode With Suppressed Harmonics For High Frequency Applications;2023 International Conference on Microelectronics (ICM);2023-12-17

2. Thermoelectric rectification in graphene based Y-junction;Micro and Nanostructures;2022-07

3. Thermoelectric rectification in a graphene-based triangular ballistic rectifier (G-TBR);Journal of Computational Electronics;2021-10-15
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