Low‐leakage track‐and‐hold buffer in 130‐nm CMOS with open‐gate FET bias
Author:
Affiliation:
1. Sensors and Electronics Laboratory, HRL Laboratories, LLC Malibu California USA
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12504
Reference10 articles.
1. Leakage sources and possible solutions in nanometer CMOS technologies
2. Aggrawal H. Babakhani A.: Systems and methods for active cancellation for improving isolation of transmission gates in high‐frequency analog to digital converters. USPTO #9 246 5050 B2 (Jan. 26 2016)
3. Genrich T.J..: High speed low drift sample and hold circuit. USPTO #4 862 016 (Aug. 29 1989)
4. A 10-nW 12-bit accurate analog storage cell with 10-aA leakage
5. Powell M.R. Yan S.: Multi‐stage sample and hold circuit. USPTO #9 576 679 B2 (Feb. 21 2017)
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