Ge out-diffusion effect on low-voltage tunnelling current in strained-Si nMOSFETs
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20072754?crawler=true&mimetype=application/pdf
Reference9 articles.
1. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
2. Fabrication and analysis of deep submicron strained-Si n-MOSFET's
3. Investigation of Transport Mechanism for Strained Si n Metal-Oxide-Semiconductor Field-Effect Transistor Grown on Multi-Layer Substrate
4. On the tunneling component of charge pumping current in ultrathin gate oxide MOSFETs
5. Analytic model for direct tunneling current in polycrystalline silicon-gate metal–oxide–semiconductor devices
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Strain sensitivity of gate leakage in strained-SOI nMOSFETs: A benefit for the performance trade-off and a novel way to extract the strain-induced band offset;Microelectronic Engineering;2009-07
2. Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability;Journal of Applied Physics;2009-06
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