High-efficiency V-band GaAs IMPATT diodes
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19840141?crawler=true&mimetype=application/pdf
Reference2 articles.
1. et al. ‘High power pulsed avalanche diodes’, Final Technical Report to US Air Force Avionics Laboratory, AFWAL-TR-80-1212; Contract F336l5-78-C-1499, Raytheon Company, February, 1981
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1. GaAs single-drift flat-profile IMPATT diodes for CW operation at D band;Electronics Letters;1992
2. Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks;Solid-State Electronics;1989-03
3. Growth of GaAs millimeter wave impatt diode material using low temperature vapor phase epitaxy;Journal of Crystal Growth;1988-05
4. High-power 60 GHz monolithic GaAs impatt diodes;Electronics Letters;1986-05-08
5. Single-drift flat-profile GaAs impatt diodes at 90 GHz;Electronics Letters;1986
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