High-efficiency single-drift GaAs IMPATT diodes for 72 GHz-Reference-Cited by-同舟云学术

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High-efficiency single-drift GaAs IMPATT diodes for 72 GHz

Published:1984 Issue:18 Volume:20 Page:752
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Zhang X.,Freyer J.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19840514?crawler=true&mimetype=application/pdf

Reference6 articles.

1. Sze, S.M.: Physics of semiconductor devices, (John Wiley & Sons, New York 1981)

2. ‘Avalanche and depletion region width for uniformly doped gallium arsenide IMPATT avalanche transit time diodes’, Research and development technical report, ECOM-4368, 1975

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Neue Einbautechniken für Millimeterwellenbauelemente;Archiv für Elektrotechnik;1993-11

2. A theoretical analysis of millimeter-wave GaAs/AlGaAs multiquantum well transit time devices by the lucky drift model;Solid-State Electronics;1993-03

3. GaAs single-drift flat-profile IMPATT diodes for CW operation at D band;Electronics Letters;1992

4. Silicon monolithic millimetre-wave integrated circuits;IEE Proceedings H Microwaves, Antennas and Propagation;1992

5. Selective etching technology for 94 GHz GaAs IMPATT diodes on diamond heat sinks;Solid-State Electronics;1989-03

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