Monolithically integrated In0.53Ga0.47As-PIN/InP-MISFET photoreceiver-Reference-Cited by-同舟云学术

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Monolithically integrated In0.53Ga0.47As-PIN/InP-MISFET photoreceiver

Published:1984 Issue:8 Volume:20 Page:314
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Kasahara K.,Hayashi J.,Makita K.,Taguchi K.,Suzuki A.,Nomura H.,Matushita S.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19840213?crawler=true&mimetype=application/pdf

Reference8 articles.

Cited by 38 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of the smart optoelectronic NOT gate based on directional couplers;Microwave and Optical Technology Letters;2000-02-20

2. Optoelectronic Devices;Handbook of Compound Semiconductors;1995

3. New hybrid integrated laser diode-drivers using microsolder bump bonding: SPICE simulation of high-speed modulation characteristics;Journal of Lightwave Technology;1994

4. An InGaAs/InP p-i-n-JFET OEIC with a wing-shaped p/sup +/-InP layer;IEEE Photonics Technology Letters;1992-04

5. Optoelectronic Integreated Circuits for Photonic Systems;IETE Journal of Research;1992-03

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