Cryogenic characterisation of 55 nm SONOS charge‐trapping memory in AC and DC modes-Reference-Cited by-同舟云学术

Cryogenic characterisation of 55 nm SONOS charge‐trapping memory in AC and DC modes

Published:2020-02 Issue:4 Volume:56 Page:199-201
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. lett.

Author:

Fan Lin‐Jie¹,Bi Jin‐Shun¹,Xu Yan‐Nan¹,Xi Kai¹,Ma Yao²,Liu Ming¹,Majumdar Sandip³

Affiliation:

1. The Key Laboratory of Microelectronics Device and Integrated TechnologyInstitute of Microelectronics of Chinese Academy of SciencesBeijing100029People's Republic of China

2. The College of Physics, Sichuan UniversitySichuan610065People's Republic of China

3. School of Physics, ICFAI University, TripuraAgartala799 210India

Funder

Innovative Research Group Project of the National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.3229

Reference16 articles.

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3. Reconfigurable cryogenic platform for the classical control of quantum processors;Homulle H.;Rev. Sci. Instrum.,2017

4. Engineering the quantum‐classical interface of solid‐state qubits;Reilly D.J.;Npj Quantum Inf.,2015

5. Ball aerospace long life, low temperature space cryocoolers;Glaister D.S.;AIP Conf. Proc.,2004

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