180 GHz high‐gain cascode power amplifier in a 130 nm SiGe process
Author:
Affiliation:
1. Department of Electronic EngineeringTsinghua UniversityBeijing100084People's Republic of China
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.4155
Reference7 articles.
1. A new feedback method for power amplifier with unilateralization and improved output return loss;Tsai Z.‐M.;IEEE Trans. Microw. Theory Techn.,2006
2. Power gain in feedback amplifier;Mason S.J.;IEEE Trans. Circuit Theory,1954
3. 200 GHz CMOS amplifier working close to device fT;Xu Z.;Electron. Lett.,2011
4. Gain‐enhanced 132–160 GHz low‐noise amplifier using 0.13 mm SiGe BiCMOS;Zhang B.;Electron. Lett.,2012
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1. A novel gain‐boosting structure with Z‐embedding and parallel pre‐embedding network for amplifiers at near‐fmax frequencies;International Journal of Circuit Theory and Applications;2023-05-23
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3. A 250–310 GHz Power Amplifier With 15-dB Peak Gain in 130-nm SiGe BiCMOS Process for Terahertz Wireless System;IEEE Transactions on Terahertz Science and Technology;2022-01
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