Substrate resistivity influence on silicon–germanium phototransistor performance
Author:
Affiliation:
1. ESYCOM LaboratoryUniversité Paris‐Est, ESIEEParis93160France
2. Department of Electrical, Electronic and Information Engineering (DEI)University of Bologna40136BolognaItaly
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.0203
Reference13 articles.
1. Bandwidth enhancement in an integratable SiGe phototransistor by removal of excess carriers;Pei Z.;Electron Device Lett.,2004
2. Low‐cost, high efficiency and high‐speed SiGe phototransistors in commercial BiCMOS;Yin T.;Photonics Technol. Lett.,2006
3. Study of lateral scaling impact on the frequency performance of SiGe heterojunction bipolar phototransistor;Tegegne Z.G.;J. Quantum Electron.,2018
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1. Optimizing SiGe–SiO2 Visible–Short‐Wave Infrared Photoresponse by Modulating Interplay Between Strain and Defects Through Annealing;Advanced Photonics Research;2024-06-19
2. A SiGe/Si Phototransistor With High FOM of Gain*VA Using 0.35-μm BiCMOS Technology;IEEE Transactions on Electron Devices;2022-10
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