1.3‐µm buried‐heterostructure VCSELs with GaAs/AlGaAs metamorphic DBRs grown by MOCVD
Author:
Affiliation:
1. NTT Device Technology Laboratories, NTT Corporation3‐1 Morinosato WakamiyaAtsugi‐shiKanagawa Pref.243Japan
2. NTT Device Innovation Centre, NTT Corporation3‐1 Morinosato WakamiyaAtsugi‐shiKanagawa Pref.243Japan
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2019.2958
Reference11 articles.
1. Electrical Design Optimization of Single-Mode Tunnel-Junction-Based Long-Wavelength VCSELs
2. Reliability of 1310 nm Wafer Fused VCSELs
3. All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-/spl mu/m wavelength range for CWDM band applications
4. 1.3 [micro sign]m short-cavity VCSELs enabling error-free transmission at 25 Gbit/s over 25 km fibre link
5. Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL
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