DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique-Reference-Cited by-同舟云学术

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DC and RF performance of GaAs MESFET fabricated on silicon substrate using epitaxial lift-off technique

Published:1990 Issue:22 Volume:26 Page:1865
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Shah D.M.,Chan W.K.,Gmitter T.J.,Florez L.T.,Schumacher H.,van der Gaag B.P.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19901199?crawler=true&mimetype=application/pdf

Reference8 articles.

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth mechanism of epitaxial CoSi2 on Si and reactive deposition epitaxy of double heteroepitaxial Si/CoSi2/Si;Thin Solid Films;2008-04

2. Inorganic Semiconductors for Flexible Electronics;Advanced Materials;2007-08-03

3. Single-crystalline silicon lift-off films for metal–oxide–semiconductor devices on arbitrary substrates;Applied Physics Letters;2000-07-24

4. Low-resistance vertical conduction across epitaxially lifted-off n-GaAs film and Pd/Ge/Pd coated Si substrate;Journal of Electronic Materials;1998-03

5. Layered-Oxide-Isolation (LOXI) Metal-Semiconductor Field Effect Transistor (MESFET) for Low Parasitic Source-Drain Capacitance;Japanese Journal of Applied Physics;1998-02-15

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