Effects of vacancy defects on graphene nanoribbon field effect transistor-Reference-Cited by-同舟云学术

Effects of vacancy defects on graphene nanoribbon field effect transistor

Published:2013-11 Issue:11 Volume:8 Page:816-821
ISSN:1750-0443
Container-title:Micro & Nano Letters
language:en
Short-container-title:Micro & Nano Letters

Author:

Chang Sheng¹,Zhang Yajun¹,Huang Qijun¹,Wang Hao²,Wang Gaofeng²

Affiliation:

1. School of Physics and TechnologyWuhan UniversityWuhan430072People's Republic of China

2. School of Electronics and InformationHangzhou Dianzi UniversityHangzhou310018People's Republic of China

Funder

National Natural Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

Subject

Condensed Matter Physics,General Materials Science,Biomedical Engineering,Bioengineering

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1049/mnl.2013.0457

Reference32 articles.

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2. MericI.DeanC.R.HanS.J.et al.: ‘High‐frequency performance of graphene field effect transistors with saturating IV‐characteristics’.IEEE Int. Electron Devices Meeting (IEDM) Washington DC USA 2011 pp.2.1.1–2.1.4

3. A Graphene Field-Effect Device

4. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

5. Energy Band-Gap Engineering of Graphene Nanoribbons

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