GaInAsP/InP lasers with monolithically integrated monitoring photodiodes fabricated by inclined reactive ion etching
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19890487?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Lateral power-monitoring photodiode monolithically integrated into 1.3μm GaInAsP laser;Solid-State Electronics;2012-01
2. Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVD;IEEE Photonics Technology Letters;1995-03
3. Coupling Efficiencies between Laser Diodes and Photo Diodes of InGaAsP/InP LD-PD Devices with Inclined PD Facets Considering PD Absorption;Japanese Journal of Applied Physics;1993-02-15
4. 10 Gbit/s DFB laser/monitor PICs for low cost high speed laser modules;Electronics Letters;1993
5. Realization and wafer test of InGaAsP/InP DFB laser/monitor OEICs;IEEE Photonics Technology Letters;1992-03
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