High-power individually addressable monolithic laser diode array-Reference-Cited by-同舟云学术

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High-power individually addressable monolithic laser diode array

Published:1989 Issue:16 Volume:25 Page:1091
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Tsunekane M.,Endo K.,Nido M.,Komazaki I.,Katayama R.,Yoshihara K.,Yamanaka Y.,Yuasa T.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_19890730?crawler=true&mimetype=application/pdf

Reference8 articles.

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Hybrid-Integrated Two-Dimensional (3×24) High-Efficiency High-Power Laser Diode Array;Japanese Journal of Applied Physics;1997-06-15

2. Uniform and high-power characteristics of AlGaInP visible laser diodes and their four-element arrays fabricated on a three-inch φ wafer;IEEE Journal of Selected Topics in Quantum Electronics;1995-06

3. Introduction and Background;Monolithic Diode-Laser Arrays;1994

4. High-power and high-temperature operation of eight-element, monolithic, 780nm MQW laser diode array on 50 μm centres;Electronics Letters;1993

5. High-power individually addressable monolithic four-beam array of GaAlAs window diffusion stripe lasers;IEEE Journal of Quantum Electronics;1992-04

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