GaAs/GaAs double heterostructure laser monolithically integrated with passive waveguide using focused ion beam etching
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19890937?crawler=true&mimetype=application/pdf
Reference6 articles.
1. Menigaux, L., Carenco, A., and Sansonetti, P.: (French Patent no.8405053)
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optimization of experimental operating parameters for very high resolution focused ion beam applications;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11
2. High‐resolution focused ion beams;Review of Scientific Instruments;1993-05
3. Micromachining processes and structures in micro-optics and optoelectronics;Journal of Micromechanics and Microengineering;1991-12-01
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