Improved current gain in bipolar transistor with bandgap narrowing in base
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19890043?crawler=true&mimetype=application/pdf
Reference5 articles.
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
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2. Effect of Heavy Doping on the Photoluminescence and Photoreflectance Spectra of Silicon and SiGe Layers.;MRS Proceedings;1995
3. GaAs Pseudo-Heterojunction Bipolar Transistor with a Heavily Carbon-Doped Base;Japanese Journal of Applied Physics;1991-12-30
4. Ion beam synthesis of buried α‐FeSi2and β‐FeSi2layers;Applied Physics Letters;1991-10-21
5. Electrical and structural properties of Si/CrSi2/Si heterostructures fabricated using ion implantation;Applied Physics Letters;1990-03-26
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