AlGaN/GaN MIS-HEMTs with fT of 194 GHz at 16 K
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20083659?crawler=true&mimetype=application/pdf
Reference6 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Transient electron transport in wurtzite GaN, InN, and AlN
3. Study of Impact of Access Resistance on High-Frequency Performance of AlGaN/GaN HEMTs by Measurements at Low Temperatures
4. High Performance AlGaN/GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators
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1. Low-temperature characteristics of normally-off AlGaN/GaN-on-Si gate-recessed MOSHFETs;Cryogenics;2018-07
2. GaN-Based Transistors for High-Frequency Applications;Reference Module in Materials Science and Materials Engineering;2016
3. Random‐telegraph‐signal noise in AlGaN/GaN MIS‐HEMT on silicon;Electronics Letters;2013-01
4. Effect of source-drain spacing on DC and RF characteristics of 45 nm-gate AlGaN/GaN MIS-HEMTs;Electronics Letters;2011
5. GaN-Based Transistors for High-Frequency Applications;Comprehensive Semiconductor Science and Technology;2011
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