Wide temperature range, from 0 to 85°C, operation of a 1.55 [micro sign]m, 40 Gbit∕s InGaAlAs electro-absorption optical modulator
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20055733?crawler=true&mimetype=application/pdf
Reference5 articles.
1. Very high-speed light-source module up to 40 Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser
2. High performance uncooled C-band, 10 Gbit∕s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules
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1. Development of a novel broadband impedance matching network for 40 Gb/s electro-absorption modulators;Microwave and Optical Technology Letters;2012-06-18
2. Integrated Hybrid Silicon Transmitters;Journal of Lightwave Technology;2012-03
3. Theoretical and Experimental Investigation of the Incident-Power-Dependent Extinction Ratio of an Electroabsorption Modulator Integrated With a Distributed Feedback Laser;IEEE Journal of Quantum Electronics;2011-01
4. Incident-Power-Dependent Extinction Ratio of Electroabsorption Modulator Integrated with Distributed Feedback Lasers: Theory and Experiment;Conference on Lasers and Electro-Optics 2010;2010
5. Electroabsorption Effect of GaInNAs in Waveguiding Structure;Japanese Journal of Applied Physics;2009-12-21
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