An analytical calculation method of SiC MOSFET junction temperature based on thermal network theory and Laplace transform

Author:

Wang Lina1ORCID,Qiu Hongcheng2,Zhang Liman1ORCID

Affiliation:

1. School of Automation Science and Electrical Engineering Beihang University Beijing China

2. Beijing System Design Institute of Mechanical‐Electrical Engineering The fourth academy of CASIC Beijing China

Abstract

AbstractIn order for full utilization of the switching devices and safe continued operation of the power converter at the same time, the junction temperature of the switching devices needs to be accurately monitored without shutting down the motor drive. This paper derives an analytical junction temperature calculation method by using Laplace transformation and thermal network theory. Based on an actual motor drive, a simulation model is established using platform for power electronic systems (PLECS). Through comparison, the derived method is proven to be able to calculate junction temperature accurately.

Funder

National Natural Science Foundation of China

Aeronautical Science Foundation of China

Publisher

Institution of Engineering and Technology (IET)

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