25–100°C automatic power control free 600 Mbit/s modulation of 0.98 µm InGaAs/AlGaAs laser for high-speed data link
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19951361?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Low-threshold tensile-strained InGaAs-InGaAsP quantum-well lasers with single-step separate-confinement heterostructures
2. Ultralow threshold and uniform operation (1.3/spl plusmn/0.09 mA) in 1.3-μm strained-MOW 10-element laser arrays for parallel high-density optical interconnects
3. 1 Gbit/s bias-free operation of 1.3 [micro sign]m strained MQW-LDs in –40 to +85°C temperature range
4. Submilliamp threshold InGaAs-GaAs strained layer quantum-well laser
5. Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Uncooled high-temperature (130/spl deg/C) operation of InGaAs-GaAs multiple quantum-well lasers at 20 Gb/s;IEEE Photonics Technology Letters;1997-05
2. Wide-temperature (–40°C to 125°C) uncooled operation of a singlemode fibre packaged high-speed optical data link at 1.2 Gbit/s;Electronics Letters;1996
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