Technique for monitoring slow interface trap characteristics in MOS capacitors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19951258?crawler=true&mimetype=application/pdf
Reference7 articles.
1. The silicon-silicon dioxide system: Its microstructure and imperfections
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3. Observation of near-interface oxide traps with the charge-pumping technique
4. Characterization, modeling, and minimization of transient threshold voltage shifts in MOSFETs
5. Slow current transients in metal–oxide–semiconductor capacitors
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