Comparison of InGaAs pin photodiodes with Ti/Pt/Au and Au reflectors
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19991191?crawler=true&mimetype=application/pdf
Reference7 articles.
1. Resonant cavity enhanced InP/InGaAs photodiode on Si using epitaxial liftoff
2. Self-timed integrated-optical serial-to-parallel converter for 100 Gbit/s time demultiplexing
3. Measurement of absorption coefficients of Ga0.47In0.53As over the wavelength range 1.0–1.7 μm
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